Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

Author： Kamiura Y. Iwagami Y. Fukuda K. Yamashita Y. Ishiyama T. Tokuda Y.

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 352-357

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

By Fang Z.-Q.

Journal of Electronic Materials, Vol. 40, Iss. 11, 2011-11 ,pp. : 2179-2186

Springer Publishing Company

Access to resources Recommend Favorite

Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

By Duenas S. Castan H. Barbolla J. Kukli K. Ritala M. Leskela M.

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1623-1629

Elsevier

Access to resources Recommend Favorite

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

By Johnstone D. Golding T.D. Hellmer R. Dinan J.H. Carmody M.

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 832-836

Springer Publishing Company

Access to resources Recommend Favorite

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

By Domengie F.

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 625-629

Springer Publishing Company

Access to resources Recommend Favorite

Improving SiC lateral DMOSFET reliability under high field stress

By Ayalew T. Gehring A. Park J.M. Grasser T. Selberherr S.

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1889-1894

Elsevier

Access to resources Recommend Favorite