The effects of operating bias conditions on the proton tolerance of SiGe HBTs

Author： Zhang S.   Cressler J.D.   Niu G.   Marshall C.J.   Marshall P.W.   Kim H.S.   Reed R.A.   Palmer M.J.   Joseph A.J.   Harame D.L.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1729-1734

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