Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation

Author: Chang S.T.   Liu C.W.   Lu S.C.  

Publisher: Elsevier

ISSN: 0038-1101

Source: Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 207-215

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