Epitaxial growth and microstructure of cubic SiC films on Si substrates

By Jia H.   Yang Y.   Chai C.   Li Y.   Zhu Z.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 49-54

Elsevier

Access to resources Recommend Favorite

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

By Yan F.   Zheng Y.D.   Chen P.   Sun L.   Gu S.L.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 113-116

Elsevier

Access to resources Recommend Favorite

Growth of diamond films on SiC, WC and cubic BN substrates

By Echigoya J.   Enoki H.   Kaminishi S.  

Journal of Materials Science, Vol. 32, Iss. 17, 1997-12 ,pp. : 4693-4699

Springer Publishing Company

Access to resources Recommend Favorite

Epitaxial growth of -SiC by rf sputtering on silicon substrates and its porosity by electrochemical anodization

By Xie E.   Zhang Z.   Ma Z.   Lin H.   He D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 157-161

Elsevier

Access to resources Recommend Favorite

Influence of argon gas pressure on the crystallinity of -SiC epitaxial films fabricated by Nd:YAG pulsed-laser deposition

By Kusumori T.   Muto H.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 55-60

Elsevier

Access to resources Recommend Favorite