Author: Touzi H. Sakly N. Kalfat R. Sfihi H. Jaffrezic-Renault N. Rammah M.B. Zarrouk H.
Publisher: Elsevier
ISSN: 0925-4005
Source: Sensors and Actuators B: Chemical, Vol.96, Iss.1, 2003-11, pp. : 399-406
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Capacitance-voltage study of SiO 2 /nanocrystalline silicon/SiO 2 double-barrier structures
By Wu L. Huang X. Shi J. Dai M. Qiao F. Li W. Xu J. Chen K.
Thin Solid Films, Vol. 425, Iss. 1, 2003-02 ,pp. :
RF hydrogen-plasma-related defects in thin SiO 2 /p-Si structures
By Simeonov S. Yourukov I. Kafedjiiska E. Szekeres A.
Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. :