Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

Author： Zong B.Y. Goh J.Y. Guo Z.B. Luo P. Wang C.C. Qiu J.J. Ho P. Chen Y.J. Zhang M.S. Han G.C.

Publisher： IOP Publishing

ISSN： 0957-4484

Source： Nanotechnology, Vol.24, Iss.24, 2013-06, pp. : 245303-245311

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