Related content

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite p–n junction

By He Jin   Li Yingxue   Zhang Xing   Wang Yangyuan  

International Journal of Electronics, Vol. 88, Iss. 10, 2001-10 ,pp. : 1067-1072

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

By Lu G. N.   Chouikha M. Ben   Sedjil M.   Sou G.   Alquie G.  

International Journal of Electronics, Vol. 83, Iss. 3, 1997-09 ,pp. : 307-316

Taylor & Francis Ltd

Access to resources Recommend Favorite

Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

By Fèvre A   Menard S   Defforge T   Gautier G  

Semiconductor Science and Technology, Vol. 31, Iss. 1, 2016-01 ,pp. : 14001-14009

IOP Publishing

Access to resources Recommend Favorite

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P⁺N junction diode

By Resfa A.   Menezla Brahimi. R.   Benchhima M.  

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84002-84010

IOP Publishing

Access to resources Recommend Favorite

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 124001-124008

IOP Publishing

Access to resources Recommend Favorite