Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications

Author： Mohankumar N. Syamal Binit Sarkar C. K.

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.96, Iss.6, 2009-06, pp. : 603-611

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

By Dubey Sarvesh

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 104002-104008

IOP Publishing

Access to resources Recommend Favorite

Reply to ‘Comment on “A compact drain current model of short-channel cylindrical gate-all-around MOSFETs”’

By Tsormpatzoglou A Tassis D H Dimitriadis C A

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38002-38002

IOP Publishing

Access to resources Recommend Favorite

Comment on ‘A compact drain current model of short-channel cylindrical gate-all-around MOSFETs’

By Jha Shankaranand Kumar Subindu

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38001-38002

IOP Publishing

Access to resources Recommend Favorite

Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETs

By Ohata A.

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 345-349

Elsevier

Access to resources Recommend Favorite

The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor

By Amin S. Intekhab Sarin R. K.

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94001-94007

IOP Publishing

Access to resources Recommend Favorite