Influence of defects in gate-oxide peripheral regions on the electrical characteristics of MOS structures

Author： Savenko A. Uritsky V. Hramthzov V.

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.35, Iss.4, 2006-07, pp. : 222-234

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis

By Zhdan A. Chucheva G. Naryshkina V.

Russian Microelectronics, Vol. 36, Iss. 3, 2007-05 ,pp. : 139-147

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

By Yuan J. S.

International Journal of Electronics, Vol. 85, Iss. 1, 1998-07 ,pp. : 1-9

Taylor & Francis Ltd

Access to resources Recommend Favorite

Influence and model of gate oxide breakdown on CMOS inverters

By Rodriguez R. Stathis J.H. Linder B.P. Joshi R.V. Chuang C.T.

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1439-1444

Elsevier

Access to resources Recommend Favorite

Influence of contamination on the electrical activity of crystal defects in silicon

By Kittler M. Seifert W. Knobloch K.

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 281-288

Elsevier

Access to resources Recommend Favorite

Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide

By Petit C. Salace G. Vuillaume D.

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1663-1668

Elsevier

Access to resources Recommend Favorite