Transformation of a Gaussian doping profile in a temperature field as influenced by the temperature dependence of the diffusion coefficient

Author： Ovcharov V. Rudakov V.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.36, Iss.3, 2007-05, pp. : 171-178

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of doping on the temperature coefficient of resistance of polysilicon films

By Kovalevskii A. Dolbik A. Voitekh S.

Russian Microelectronics, Vol. 36, Iss. 3, 2007-05 ,pp. : 153-158

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Dopant diffusion dynamics and optimal diffusion time as influenced by diffusion-coefficient nonuniformity

By Pankratov E.

Russian Microelectronics, Vol. 36, Iss. 1, 2007-02 ,pp. : 33-39

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

By Gadoev S. Skorobogatov P.

Russian Microelectronics, Vol. 34, Iss. 6, 2005-11 ,pp. : 383-385

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

捷运电联车车厢内空调系统对温度流场变化之分析 Analysis of EMU Air Conditioning System inside the Temperature Profile of the Flow Field

By 李嘉塗黄志宏余汶龍

Modeling and Simulation, Vol. 01, Iss. 01, 2012-08 ,pp. : 18-24

汉斯出版社

Access to resources Recommend Favorite

Temperature dependence of silicon power MOSFETs switching parameters

By Habchi R. Salame C. Nsouli B. Mialhe P.

Microelectronics International, Vol. 23, Iss. 2, 2006-05 ,pp. : 21-23

Emerald Group Publishing Ltd

Access to resources Recommend Favorite