Effect of Charge Trapping on the Asymmetrical Shift of Memory Window in MFIS Devices

Author: Lee Y. W.   Kang D.   Roh Y.   Lee S. K.   Kim Y.  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.49, Iss.1, 2002-01, pp. : 31-40

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Abstract