Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.36, Iss.1, 2015-01, pp. : 14006-14009

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content