Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors

Author： KaoW C GoryllM MarinellaM KaplarR J JiaoC DharS CooperJ A SchroderD K

E-ISSN： 1361-6641|30|7|75011-75016

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.7, 2015-07, pp. : 75011-75016

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

By Qiaozhi Zhu Dejun Wang

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24002-24005

IOP Publishing

Access to resources Recommend Favorite

Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

By Chao Han Yuming Zhang Qingwen Song Xiaoyan Tang Hui Guo Yimen Zhang Fei Yang Yingxi Niu

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 123006-123014

IOP Publishing

Access to resources Recommend Favorite

Ultra high voltage MOS controlled 4H-SiC power switching devices

By RyuS CapellC Van BruntE JonasC O’LoughlinM ClaytonJ LamK PalaV HullB LemmaY LichtenwalnerD ZhangQ J RichmondJ ButlerP GriderD CasadyJ AllenS PalmourJ HinojosaM TiptonC W ScozzieC

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 84001-84007

IOP Publishing

Access to resources Recommend Favorite

Activation of nitrogen implants in 6H-SiC

By Pan J. Cooper J. Melloch M.

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 208-211

Springer Publishing Company

Access to resources Recommend Favorite

Effect of Processing Conditions on Inversion Layer Mobility and Interface State Density in 4H-SiC MOSFETs

By Banerjee S. Chatty K. Chow T.P. Gutmann R.J.

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 253-259

Springer Publishing Company

Access to resources Recommend Favorite