Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X‐ray diffraction setup

Publisher： John Wiley & Sons Inc

E-ISSN： 1600-5767|48|3|702-710

ISSN： 0021-8898

Source： JOURNAL OF APPLIED CRYSTALLOGRAPHY (ELECTRONIC), Vol.48, Iss.3, 2015-06, pp. : 702-710

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