Related content

Modification of the near-surface layer of n-Si by hydrogen ions in a high-voltage pulsed beam discharge

By Demkin V.   Mel’nichuk S.   Semukhin B.  

Technical Physics Letters, Vol. 31, Iss. 4, 2005-04 ,pp. : 295-297

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electrical characteristics and the energy band diagram of the isotype n-Si_1−x Ge_x/n-Si heterojunction in relaxed structures

By Orlov L.   Horváth Zs.   Potapov A.   Orlov M.   Ivin S.   Vdovin V.   Steinman E.   Fomin V.  

Physics of the Solid State, Vol. 46, Iss. 11, 2004-11 ,pp. : 2139-2145

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si

By Sobolev N.   Emel’yanov A.   Shek E.   Vdovin V.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 35-39

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

In situ examination of the chemical etching of SiO₂-Si structures using an atomic force microscope

By Bukharaev A.   Bukharaeva A.   Nurgazizov N.   Ovchinnikov D.  

Technical Physics Letters, Vol. 24, Iss. 11, 1998-11 ,pp. : 863-865

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

An investigation into second harmonic generation by Si-rich SiN_x thin films deposited by RF sputtering over a wide range of Si concentrations

By Kitao Akihiro   Imakita Kenji   Kawamura Ibuki   Fujii Minoru  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 21, 2014-05 ,pp. : 215101-215108

IOP Publishing

Access to resources Recommend Favorite