Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

Author：   Bhat Navakanta   Mohan Sangeneni  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.5, 2014-05, pp. : 55007-55014

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