Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization*

Author: Khlifi Y.   Kassmi K.   Aziz A.   Olivie F.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|28|1|27-41

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.28, Iss.1, 2004-06, pp. : 27-41

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Abstract