Related content

Monolithic integrated SAW filter based on AlN for high-frequency applications

By Udo Ch Kaletta   Santos Paulo V.   Wolansky Dirk   Scheit Alexander   Fraschke Mirko   Wipf Christian   Zaumseil Peter   Wenger Christian  

Semiconductor Science and Technology, Vol. 28, Iss. 6, 2013-06 ,pp. : 65013-65019 (7)

IOP Publishing

Access to resources Recommend Favorite

The Effect of Built-in Electric Field in GaN/AlGaN Quantum Wells with High AlN Mole Fraction

By Ng H.M.   Harel R.   Chu S.N.G.   Cho A.Y.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 134-137 (4)

Springer Publishing Company

Access to resources Recommend Favorite

Practical evaluations of a ZVS-PFM quasi load-resonant high-frequency inverter using a new generation IGBT for an induction-heated cooking appliance

By Hirota Izuo   Omori Hideki   Nakaoka Mutsuo  

International Journal of Electronics, Vol. 80, Iss. 2, 1996-02 ,pp. : 329-340 (12)

Taylor & Francis Ltd

Access to resources Recommend Favorite

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

By Li Haoran   Keller Stacia   Chan Silvia H   Lu Jing   DenBaars Steven P   Mishra Umesh K  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55015-55021 (7)

IOP Publishing

Access to resources Recommend Favorite

Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

By Hwang J.   Schaff W.J.   Green B.M.   Cha H.   Eastman L.F.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 363-366 (4)

Elsevier

Access to resources Recommend Favorite