Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15023-15031

IOP Publishing

Access to resources Recommend Favorite

Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser

By Ren Y.   He A.-L.   Shi S.-T.   Guo G.   Chen L.   Wen S.-J.   Wong R.   Vonno N.   Bhuva B.  

Journal of Electronic Testing, Vol. 30, Iss. 1, 2014-02 ,pp. : 149-154

Springer Publishing Company

Access to resources Recommend Favorite

Experimental study on the single event effects in pulse width modulators by laser testing

By Wen Zhao   Xiaoqiang Guo   Wei Chen   Hongxia Guo   Dongsheng Lin   Hanning Wang   Yinhong Luo   Lili Ding   Yuanming Wang  

Journal of Semiconductors, Vol. 36, Iss. 11, 2015-11 ,pp. : 115008-115012

IOP Publishing

Access to resources Recommend Favorite

A single-channel 10-bit 160 MS/s SAR ADC in 65 nm CMOS

By Yuxiao Lu   Lu Sun   Zhe Li   Jianjun Zhou  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 45009-45016

IOP Publishing

Access to resources Recommend Favorite

Experimental characterization of peripheral photocurrent in CMOS photodiodes down to 65 nm technology

By Blanco-Filgueira B.   López P.   Roldán J.B.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45011-45017

IOP Publishing

Access to resources Recommend Favorite