A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Author： Kuntman A.   Ardali A.   Kuntman H.   Kacar F.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 217-223

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