Effect of N 2 O/SiH 4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition

By Rhee S.-W.   Park Y.-B.   Kang J.-K.  

Thin Solid Films, Vol. 280, Iss. 1, 1996-07 ,pp. : 43-50

Elsevier

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Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH 4 , SiF 4 and O 2

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Thin Solid Films, Vol. 376, Iss. 1, 2000-11 ,pp. : 26-31

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Plasma enhanced chemical vapor deposition of nanocrystalline silicon films from SiF 4 -H 2 -He at low temperature

By Cicala G.   Capezzuto P.   Bruno G.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 59-62

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Low temperature growth of SiO 2 on SiC by plasma enhanced chemical vapor deposition for power device applications

By Mandracci P.   Ferrero S.   Ricciardi C.   Scaltrito L.   Richieri G.   Sgorlon C.  

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Characterization of trimethylaluminum-N 2 O-He glow discharge in plasma-enhanced chemical vapor deposition of aluminum oxide films

By Kim Y.-C.   Chun J.S.   Lee W.-J.  

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