Low-temperature (=<600 o C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

Author： Clough F.J. Brown A.O. Milne W.I. Madathil S.N.E. Ekkanath Madathil S.N.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.270, Iss.1, 1995-12, pp. : 517-521

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low-temperature PECVD of silicon dioxide on polymeric hydrogels

By Suchaneck G. Guenther M. Sorber J. Gerlach G. Arndt K.-F. Wolf B.

Applied Physics A, Vol. 78, Iss. 5, 2004-03 ,pp. : 695-698

Springer Publishing Company

Access to resources Recommend Favorite

In-situ low-temperature (600 o C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth

By Kim H.-W. Reif R.

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 192-198

Elsevier

Access to resources Recommend Favorite

Optical and structural properties of low-temperature PECVD ETMS SiO x thin films

By Song Y. Sakurai T. Kishimoto K. Maruta K. Matsumoto S. Kikuchi K.

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 92-97

Elsevier

Access to resources Recommend Favorite

Depth inhomogeneity of deposited thin films: application to semi-insulating polycrystalline silicon films

By Kucrkova A. Navratil K. Zemek J.

Thin Solid Films, Vol. 323, Iss. 1, 1998-06 ,pp. : 53-58

Elsevier

Access to resources Recommend Favorite

Large-Area YBa 2 Cu 3 O 7 - x Films on Sapphire with Excellent Microwave Power Handling Capability

By Zaitsev A.G.

Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 11, Iss. 3, 1998-06 ,pp. : 361-365

Springer Publishing Company

Access to resources Recommend Favorite