Spectroscopic ellipsometry study of amorphous silicon anodically oxidised

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Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 345-349

Elsevier

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In situ measurement of the crystallization of amorphous silicon in a vertical furnace using spectroscopic ellipsometry

By Petrik P.   Lehnert W.   Schneider C.   Lohner T.   Fried M.   Gyulai J.   Ryssel H.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 235-240

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Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry

By Collins R.W.   Koh J.   Ferlauto A.S.   Rovira P.I.   Lee Y.   Koval R.J.   Wronski C.R.  

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Hydrogen-plasma etching of hydrogenated amorphous silicon: a study by a combination of spectroscopic ellipsometry and trap-limited diffusion model

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Philosophical Magazine, Vol. 84, Iss. 6, 2004-02 ,pp. : 595-609

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Lateral growth control by thickness spatial modulation of amorphous silicon film

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