Recombination mechanisms via deep levels in RTCVD Si/Si 0.85 Ge 0.15 /Si double heterostructures

Author: Gamez-Cuatzin H.   De Barros O.   Bremond G.   Warren P.   Dutartre D.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 194-197

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Abstract