Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

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Elsevier

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Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

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Composition dependence of surface morphology of ultrathin a-SiGe:H alloys studying by atomic force microscopy

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Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55- m photodetector applications

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GeSi infrared detectors

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