Formation of coherent Ge shallow dome islands on Si(001) by ultra-high-vacuum ion beam sputter deposition

By Chung Hung-Chin  

Applied Physics A, Vol. 91, Iss. 2, 2008-05 ,pp. : 267-271

Springer Publishing Company

Access to resources Recommend Favorite

Formation of 'environmentally friendly' semiconductor ( -FeSi 2 ) thin films prepared by ion beam sputter deposition (IBSD) method

By Sasase M.   Nakanoya T.   Yamamoto H.   Hojou K.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 73-76

Elsevier

Access to resources Recommend Favorite

Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

Access to resources Recommend Favorite

Epitaxial growth properties of Si and SiGe films prepared by ion beam sputtering process

By Sasaki K.   Nagai H.   Hata T.  

Vacuum, Vol. 59, Iss. 2, 2000-11 ,pp. : 397-402

Elsevier

Access to resources Recommend Favorite

Mo/Si multilayers for EUV lithography by ion beam sputter deposition

By Chasse T.   Neumann H.   Ocker B.   Scherer M.   Frank W.   Frost F.   Hirsch D.   Schindler A.   Wagner G.   Lorenz M.   Otto G.   Zeuner M.   Rauschenbach B.  

Vacuum, Vol. 71, Iss. 3, 2003-05 ,pp. : 407-415

Elsevier

Access to resources Recommend Favorite