Ion assisted MBE growth of SiGe nanostructures

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 104-108

Elsevier

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Cold-walled UHV/CVD batch reactor for the growth of Si 1-x Ge x layers

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UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

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Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates

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