Author: Takai O. Ikuta K. Inoue Y.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.318, Iss.1, 1998-04, pp. : 148-150
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Crystallinity and stoichiometry of InN x films deposited by reactive dc magnetron sputtering
By Song P.K. Sato D. Kon M. Shigesato Y.
Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. :
Nanostructure of ZnO thin films prepared by reactive rf magnetron sputtering
By Takai O. Futsuhara M. Shimizu G. Lungu C.P. Nozue J.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :
Piezoelectric coefficient of InN thin films prepared by magnetron sputtering
By Cao C.B. Chan H.L.W. Choy C.L.
Thin Solid Films, Vol. 441, Iss. 1, 2003-09 ,pp. :
Properties of aluminium oxide thin films deposited by reactive magnetron sputtering
By Koski K. Holsa J. Juliet P.
Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. :