Study of surface roughening of tensily strained Si 1-x-y Ge x C y films grown by ultra high vacuum-chemical vapor deposition

By Calmes C.   Bouchier D.   Debarre D.   Le Thanh V.   Clerc C.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 150-155

Elsevier

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

By Hoyt J.L.   Mitchell T.O.   Rim K.   Singh D.V.   Gibbons J.F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 41-46

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Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH 3 SiCl 3 -H 2

By Loumagne F.   Langlais F.   Naslain R.   Schamm S.   Dorignac D.   Sevely J.  

Thin Solid Films, Vol. 254, Iss. 1, 1995-01 ,pp. : 75-82

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Influence of grown-in defects on the optical and electrical properties of Si/Si 1-x Ge x /Si heterostructures

By Loo R.   Caymax M.   Simoen E.   Howard D.   Goryll M.   Klaes D.   Vescan L.   Gravesteijn D.   Pettersson H.   Zhang X.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 227-231

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Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer

By Uchida M.   Kitabatake M.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 32-36

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