Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

By Tatsuyama C.   Asano T.   Nakao T.   Matada H.   Tambo T.   Ueba H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 161-166

Elsevier

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Intense visible photoluminescence from molecular beam epitaxy porous Si 1-x Ge x grown on Si

By Unal B.   Bayliss S.C.   Phillips P.   Parker E.H.C.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 274-279

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Growth of Si 1-y C y /Si- and Si 1-x-y Ge x C y /Si-multiple quantum wells using molecular beam epitaxy

By Hartmann R.   Grutzmacher D.   Muller E.   Gennser U.   Dommann A.   Schroter P.   Warren P.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 158-162

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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