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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

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HRTEM study of Si 1-x Ge x multilayer

By Werckmann J.   Ulhaq-Bouillet C.   Romeo M.   Chelly R.   Teodorescu C.   Ghica C.  

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

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Strained Si 1-x Ge x graded channel PMOSFET grown by UHVCVD

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