On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiO x N y films

By Alayo M.I.   Pereyra I.   Scopel W.L.   Fantini M.C.A.  

Thin Solid Films, Vol. 402, Iss. 1, 2002-01 ,pp. : 154-161

Elsevier

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Characterization of trimethylaluminum-N 2 O-He glow discharge in plasma-enhanced chemical vapor deposition of aluminum oxide films

By Kim Y.-C.   Chun J.S.   Lee W.-J.  

Thin Solid Films, Vol. 258, Iss. 1, 1995-03 ,pp. : 67-74

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Formation of cubic C 3 N 4 thin films by plasma enhanced chemical vapor deposition

By Zhang Z.   Guo H.   Zhong G.   Xiong Q.   Yu F.   Fan X.  

Thin Solid Films, Vol. 346, Iss. 1, 1999-06 ,pp. : 96-99

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Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition)

By Cho N.I.   Kim Y.M.   Lim J.S.   Hong C.   Sul Y.   Kim C.K.  

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 1-7

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Formation and characterization of the fluorocarbonated-SiO 2 films by O 2 /FTES-helicon plasma chemical vapor deposition

By Oh K.S.   Kang M.S.   Lee K.-M.   Kim D.S.   Choi C.K.   Yun S.M.   Chang H.Y.   Kim K.H.  

Thin Solid Films, Vol. 345, Iss. 1, 1999-05 ,pp. : 45-49

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