On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiO x N y films

By Alayo M.I.   Pereyra I.   Scopel W.L.   Fantini M.C.A.  

Thin Solid Films, Vol. 402, Iss. 1, 2002-01 ,pp. : 154-161

Elsevier

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Characterization of SiO x N y films deposited from SiCI 4 by remote plasma-enhanced chemical vapor deposition

By Sanchez O.   Aguilar M.A.   Falcony C.   Martnez-Duart J.M.   Hernandez Velez M.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 149-152

Elsevier

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Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO 2 on polymeric substrates

By Dennler G.   Houdayer A.   Latreche M.   Segui Y.   Wertheimer M.R.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 1-3

Elsevier

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Electron beam induced damage in N-rich SiN x films deposited by plasma enhanced chemical vapour deposition

By Vouroutzis N.   Paloura E.C.   Kuo Y.   Lioutas C.B.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 28-31

Elsevier

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Mechanical properties of a-C:H and a-C:H/SiO x nanocomposite thin films prepared by ion-assisted plasma-enhanced chemical vapor deposition

By Lee Y.H.   Lee J.H.   Kim D.S.   Farouk B.  

Thin Solid Films, Vol. 280, Iss. 1, 1996-07 ,pp. : 204-210

Elsevier

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