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By Yoon S.F.   Ji R.   Ahn J.  

Vacuum, Vol. 48, Iss. 5, 1997-05 ,pp. : 455-462

Elsevier

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Effects of CH 4 /SiH 4 flow ratio and microwave power on the growth of -SiC on Si by ECR-CVD using CH 4 /SiH 4 /Ar at 200 o C

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Thin Solid Films, Vol. 405, Iss. 1, 2002-02 ,pp. : 17-22

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Indium doping of amorphous SiC:H films prepared by reactive magnetron co-sputtering

By Saito N.   Inui Y.   Yamaguchi T.   Nakaaki I.  

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The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon ( c-Si:H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique

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Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 206-212

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Effect of chamber pressure on p-type c-SiC:H thin films prepared by photo-CVD

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Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 37-42

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