Excited helium-induced CVD of a-Si 1-x C x :H films from trimethylchlorosilane

By Smirnova T.P.   Yakovkina L.V.   Ayupov B.M.   Dolgpvesova I.P.   Nadolinny V.A.   Kitchay V.N.  

Thin Solid Films, Vol. 353, Iss. 1, 1999-09 ,pp. : 79-84

Elsevier

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Properties of a-Si 1-x C x :H thin films deposited from the organosilane Triethylsilane

By Niemann J.   Bauhofer W.  

Thin Solid Films, Vol. 352, Iss. 1, 1999-09 ,pp. : 249-258

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Quantitative analysis of a-Si 1-x C x :H thin films by vibrational spectroscopy and nuclear methods

By Gracin D.   Bogdanovic I.   Borjanovic V.   Jaksic M.   Pastuovic Z.   Dutta J.M.   Vlahovic B.   Nemanich R.J.  

Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 303-308

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Investigation of ion irradiation effects in a-Si X C 1-X :H thin films

By Grigonis A.   Silinskas M.   Kopustinskas V.  

Vacuum, Vol. 68, Iss. 3, 2002-11 ,pp. : 257-261

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Fabrication of a-Si 1-x C x :H thin films for solar cells by the Cat-CVD method using a carbon catalyzer

By Sugita K.   Itoh M.   Masuda A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 170-173

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