Effects of sputter-deposited materials (W, Ti and SiC) on interfacial reaction between MoSi 2 and Nb

Author： Kurokawa K. Ochiai G. Takahashi H. Ohta S. Takahashi H.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.59, Iss.1, 2000-10, pp. : 284-291

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

EXAFS of sputter-deposited MoS 2 films

By Lince J.R. Hilton M.R. Bommannavar A.S.

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 120-134

Elsevier

Access to resources Recommend Favorite

Co-sputter deposited Ta-Si diffusion barrier between Si and Cu: the effects of Si content on the barrier property

By Lee Y.-J. Suh B.-S. Park C.-O.

Thin Solid Films, Vol. 357, Iss. 2, 1999-12 ,pp. : 237-241

Elsevier

Access to resources Recommend Favorite

Roughening kinetics of reactively sputter-deposited Ti-Al-N films on Si(100)

By Liu Z.-J. Shum P.W. Li K.Y. Shen Y.G.

Philosophical Magazine Letters, Vol. 83, Iss. 10, 2003-10 ,pp. : 627-634

Taylor & Francis Ltd

Access to resources Recommend Favorite

Evolution of interface diffusion and structure of Ni films sputter-deposited on Si(001)

By Qiu H. Tian Y. Hashimoto M.

Vacuum, Vol. 70, Iss. 4, 2003-04 ,pp. : 493-497

Elsevier

Access to resources Recommend Favorite

Mo/Si multilayers for EUV lithography by ion beam sputter deposition

By Chasse T. Neumann H. Ocker B. Scherer M. Frank W. Frost F. Hirsch D. Schindler A. Wagner G. Lorenz M. Otto G. Zeuner M. Rauschenbach B.

Vacuum, Vol. 71, Iss. 3, 2003-05 ,pp. : 407-415

Elsevier

Access to resources Recommend Favorite