Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Author: Curutchet A.   Malbert N.   Labat N.   Touboul A.   Gaquiere C.   Minko A.   Uren M.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1713-1718

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