The effects of baking cycles on the properties of ferroelectric thin films

By Watts B.E.   Leccabue F.   Fanciulli M.   Ferrari S.   Tallarida G.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 147-152

Elsevier

Access to resources Recommend Favorite

Ferroelectric properties of Pb(Zr,Ti)O 3 heterolayered thin films for FRAM applications

By Kim K.-T.   Kim C.-I.   Lee S.-G.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 662-669

Elsevier

Access to resources Recommend Favorite

Fabrication and properties of silicon-based PZT thin films for MFSFET applications

By Ren T.-L.   Shao T.-Q.   Zhang W.-Q.   Li C.-X.   Liu J.-S.   Liu L.-T.   Zhu J.   Li Z.-J.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 554-560

Elsevier

Access to resources Recommend Favorite

Effects of rare earth Eu doping on ferroelectric properties of PbZr 0.52 Ti 0.48 O 3 thin films by sol-gel methods

By Yu Y.J.   Chan H.L.W.   Wang F.P.   Zhao L.C.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 726-732

Elsevier

Access to resources Recommend Favorite

Dielectric and ferroelectric properties of in-plane lead lanthanum titanate thin films

By Song Z.T.   Chan H.L.W.   Choy C.L.   Lin C.L.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 887-890

Elsevier

Access to resources Recommend Favorite