A new damascene architecture for high-performance metal-insulator-metal capacitors integration

By Farcy A.   Torres J.   Arnal V.   Fayolle M.   Feldis H.   Jourdan F.   Assous M.   Di Maria J.L.   Vidal V.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 368-372

Elsevier

Access to resources Recommend Favorite

Effect of Electrolyte on the Performance of Anodic Titania Metal-Insulator-Metal Capacitors

By Karthik R.   Kannadassan D.   Baghini Maryam Shojaei   Mallick P.S.  

Journal of Nanoelectronics and Optoelectronics, Vol. 8, Iss. 3, 2013-03 ,pp. : 311-315

American Scientific Publishers

Access to resources Recommend Favorite

Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors

By YanS A   LiG   ZhaoW   GuoH X   XiongY   TangM H   LiZ   XiaoY G   ZhangW L   LeiZ F   ZhouY C  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85020-85027

IOP Publishing

Access to resources Recommend Favorite

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

By  

Semiconductor Science and Technology, Vol. 30, Iss. 2, 2015-02 ,pp. : 24002-24017

IOP Publishing

Access to resources Recommend Favorite

Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO 2 Metal-Insulator-Metal Devices

By Mahapatra R.  

Journal of Electronic Materials, Vol. 41, Iss. 4, 2012-04 ,pp. : 656-659

Springer Publishing Company

Access to resources Recommend Favorite