Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO 2 Metal-Insulator-Metal Devices

Author： Mahapatra R.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.41, Iss.4, 2012-04, pp. : 656-659

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