Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

By Takenaka K.   Shiratani M.   Onishi M.   Takeshita M.   Kinoshita T.   Koga K.   Watanabe Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 301-304

Elsevier

Access to resources Recommend Favorite

Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate

By Wang J.   Zhu Z.   Park K.   Hiraga K.   Yao T.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 232-236

Springer Publishing Company

Access to resources Recommend Favorite

Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)

By Chen Y.   Singh R.   Narayan J.  

Journal of Electronic Materials, Vol. 26, Iss. 4, 1997-04 ,pp. : 350-354

Springer Publishing Company

Access to resources Recommend Favorite

Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

By Lee Y.J.   Kim K.N.   Song B.K.   Yeom G.Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 419-423

Elsevier

Access to resources Recommend Favorite

Inductively Coupled Plasma Etch Damage in 4H-SiC Investigated by Schottky Diode Characterization

By Danielsson E.   Lee S.-K.   Zetterling C.-M.   Östling M.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 247-252

Springer Publishing Company

Access to resources Recommend Favorite