Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl 2 and BCl 3 chemistries

By Hong J.   Lambers E.   Abernathy C.   Pearton S.   Shul R.   Hobson W.  

Journal of Electronic Materials, Vol. 27, Iss. 3, 1998-03 ,pp. : 132-137

Springer Publishing Company

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ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH 4 /H 2 /Ar vs BCl 3 /N 2 plasma etch chemistries

By Kopf R.   Hamm R.   Malik R.   Ryan R.   Geva M.   Burm J.   Tate A.  

Journal of Electronic Materials, Vol. 27, Iss. 2, 1998-02 ,pp. : 69-72

Springer Publishing Company

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Performance characterization of InGaP Schottky contact with ITO transparent electrodes

By Lee Ching-Ting   Fu Ching-Hung   Tsai Chang-Da   Lin Wei  

Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. : 1017-1021

Springer Publishing Company

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Zn-Doped InGaP Grown by the LP- MOCVD

By Kúdela R.   Novak J.   Kucera M.  

Journal of Electronic Materials, Vol. 26, Iss. 1, 1997-12 ,pp. : 7-10

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Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs

By Chen L.   Fan G.   Meng Y.  

Microelectronics, Vol. 35, Iss. 2, 2004-02 ,pp. : 125-130

Elsevier

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