Reliability of ultra-thin oxides in CMOS circuits

By Stathis J.H.   Linder B.P.   Rodriguez R.   Lombardo S.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1353-1360

Elsevier

Access to resources Recommend Favorite

Interfacial stability between zirconium oxide thin films and silicon

By Zhang N.   Song Z.   Xing S.   Shen Q.   Lin C.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 427-432

Elsevier

Access to resources Recommend Favorite

Stress analysis of ultra-thin silicon chip-on-foil electronic assembly under bending

By Wacker Nicoleta   Richter Harald   Hoang Tu   Gazdzicki Pawel   Schulze Mathias   Angelopoulos Evangelos A   Hassan Mahadi-Ul   Burghartz Joachim N  

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95007-95018

IOP Publishing

Access to resources Recommend Favorite

Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide

By Petit C.   Salace G.   Vuillaume D.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1663-1668

Elsevier

Access to resources Recommend Favorite

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices

By Fadlallah M.   Petit C.   Meinertzhagen A.   Ghibaudo G.   Bidaud M.   Simonetti O.   Guyader F.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1433-1438

Elsevier

Access to resources Recommend Favorite