Electrical properties of ultrathin oxide grown by high pressure oxidation and N2O nitridation for ULSI device applications

By Roh Tae Moon   Lee Dae Woo   Kim Jongdae   Koo Jin Gun   Nam Kee Soo   Lee Duk-Dong  

International Journal of Electronics, Vol. 88, Iss. 4, 2001-04 ,pp. : 423-434

Taylor & Francis Ltd

Access to resources Recommend Favorite

Characterization of AlGaN/GaN Structures on Various Substrates Grown by Radio Frequency-Plasma Assisted Molecular Beam Epitaxy

By Kang Sangbeom   Doolittle W. Alan   Lee K. K.   Dai Z.R.   Wang Z.L.   Stock Stuart R.   Brown April S.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 156-161

Springer Publishing Company

Access to resources Recommend Favorite

Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

By Qin Z.X.   Chen Z.Z.   Zhang H.X.   Ding X.M.   Hu X.D.   Yu T.J.   Tong Y.Z.   Zhang G.Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 6, 2002-12 ,pp. : 473-475

Elsevier

Access to resources Recommend Favorite

Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

Springer Publishing Company

Access to resources Recommend Favorite

Electrical properties of ultrathin TiO 2 films on Si 1-y C y heterolayers

By Dalapati G.K.   Chatterjee S.   Samanta S.K.   Nandi S.K.   Bose P.K.   Varma S.   Patil S.   Maiti C.K.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1793-1798

Elsevier

Access to resources Recommend Favorite