Cu-CMP for dual damascene technology: Prestonian vs. non-prestonian regimes of Cu removal

Author： Gotkis Y.   Guha S.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.30, Iss.4, 2001-04, pp. : 396-399

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Benzotriazole removal on post-Cu CMP cleaning

By Jiying Tang   Yuling Liu   Ming Sun   Shiyan Fan   Yan Li  

Journal of Semiconductors, Vol. 36, Iss. 6, 2015-06 ,pp. : 66001-66004

IOP Publishing

Access to resources Recommend Favorite

A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning

By Haiwen Deng   Baimei Tan   Baohong Gao   Chenwei Wang   Zhangbing Gu   Yan Zhang  

Journal of Semiconductors, Vol. 36, Iss. 10, 2015-10 ,pp. : 106002-106006

IOP Publishing

Access to resources Recommend Favorite

Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

By Gignac L.M.   Hu C.-K.   Liniger E.G.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 398-405

Elsevier

Access to resources Recommend Favorite

Plasma cleaning technology in the dual damascene process

By Kang T.-K.  

Microelectronic Engineering, Vol. 71, Iss. 1, 2004-01 ,pp. : 21-27

Elsevier

Access to resources Recommend Favorite

Removal of residual CuO particles on the post CMP wafer surface of multi-layered copper

By Yan Li   Ming Sun   Xinhuan Niu   Yuling Liu   Yangang He   Hailong Li   Aochen Wang   Hongbo Li  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 46001-46008

IOP Publishing

Access to resources Recommend Favorite