Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

By Chao Han   Yuming Zhang   Qingwen Song   Xiaoyan Tang   Hui Guo   Yimen Zhang   Fei Yang   Yingxi Niu  

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 123006-123014

IOP Publishing

Access to resources Recommend Favorite

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al_xGa_1−xAs heterostructures

By Koop E J   Iqbal M J   Limbach F   Boute M   van Wees B J   Reuter D   Wieck A D   Kooi B J    

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25006-25014

IOP Publishing

Access to resources Recommend Favorite

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

By Ofuonye Benedict   Lee Jaseun   Yan Minjun   Sun Changwoo   Zuo Jian-Min   Adesida Ilesanmi  

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95005-95014

IOP Publishing

Access to resources Recommend Favorite

Wafer damage issue study by heavy Al wire wedge bonding

By Zhang Hanmin   Hu Ming   Zong Fei   Yin Baoguan   Ye Denghong   He Qingchun   Wang Zhijie  

Microelectronics International, Vol. 31, Iss. 2, 2014-04 ,pp. : 129-136

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films

By Kaouache B.   Gergaud P.   Thomas O.   Bostrom O.   Legros M.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 447-454

Elsevier

Access to resources Recommend Favorite