A unified model for high-frequency current noise of MOSFETs

Author： Teng H.-F.   Jang S.-L.   Juang M.H.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.11, 2003-11, pp. : 2043-2048

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High frequency channel noise measurement and characterization in deep submicron MOSFETs

By Allam A.  

Analog Integrated Circuits and Signal Processing, Vol. 65, Iss. 2, 2010-11 ,pp. : 259-264

Springer Publishing Company

Access to resources Recommend Favorite

Simulation of the substrate current in MOSFETs using a unified model for the Auger generation and recombination rate

By Ishihara T.   Enda T.   Matsuzawa K.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 453-459

Elsevier

Access to resources Recommend Favorite

A High-Frequency CMOS Current Summing Circuit

By Comer D.J.  

Analog Integrated Circuits and Signal Processing, Vol. 36, Iss. 3, 2003-09 ,pp. : 215-220

Springer Publishing Company

Access to resources Recommend Favorite

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

By Jen S.H.  

Analog Integrated Circuits and Signal Processing, Vol. 23, Iss. 2, 2000-05 ,pp. : 93-101

Springer Publishing Company

Access to resources Recommend Favorite

An analysis of high-frequency noise in RF active CMOS mixers

By Heydari Payam  

Analog Integrated Circuits and Signal Processing, Vol. 48, Iss. 3, 2006-09 ,pp. : 199-209

Springer Publishing Company

Access to resources Recommend Favorite