On the impact of nanotopography of silicon wafers on post-CMP oxide layers

Author： Schmolke R.   Deters R.   Thieme P.   Pech R.   Schwenk H.   Diakourakis G.  

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.4, 2002-08, pp. : 413-418

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Impact of filtering on nanotopography measurement of 300mm silicon wafers

By Riedel F.   Gerber H.-A.   Wagner P.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 465-472

Elsevier

Access to resources Recommend Favorite

Characterization of microparticles and oxide layers generated by laser irradiation of diamond-machined silicon wafers

By Yan Jiwang   Sakai Shin   Isogai Hiromichi   Izunome Koji  

Semiconductor Science and Technology, Vol. 26, Iss. 2, 2011-02 ,pp. : 25006-25012

IOP Publishing

Access to resources Recommend Favorite

Non-ionic surfactant on particles removal in post-CMP cleaning

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 26002-26006

IOP Publishing

Access to resources Recommend Favorite

Electrical and Mechanical Properties of Through-Silicon Vias and Bonding Layers in Stacked Wafers for 3D Integrated Circuits

By Hwang Sung-Hwan  

Journal of Electronic Materials, Vol. 41, Iss. 2, 2012-02 ,pp. : 232-240

Springer Publishing Company

Access to resources Recommend Favorite

Study on the cleaning of silicon after CMP in ULSI

By Liu Y.   Zhang K.   Wang F.   Han Y.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 433-437

Elsevier

Access to resources Recommend Favorite