Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

Author: Aouaj Abdellah   Bouziane Ahmed   NouaÇry Ahmed  

Publisher: Taylor & Francis Ltd

ISSN: 1362-3060

Source: International Journal of Electronics, Vol.92, Iss.8, 2005-08, pp. : 437-443

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content