Degradation pattern of thin HfO2 films on Si(100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering

Author： Zenkevich A.   Lebedinskii Y.   Barantsev N.   Nevolin V.   Kulikauskas V.   Scarel G.   Fanciulli M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.35, Iss.4, 2006-07, pp. : 210-215

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics

By Fenfen Tao   Hong Yang   Bo Tang   Zhaoyun Tang   Yefeng Xu   Jing Xu   Qingpu Wang   Jiang Yan  

Journal of Semiconductors, Vol. 35, Iss. 6, 2014-06 ,pp. : 64003-64008

IOP Publishing

Access to resources Recommend Favorite

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitors

By Chen Liu   Yuming Zhang   Yimen Zhang   Hongliang Lü   Bin Lu  

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 124003-124006

IOP Publishing

Access to resources Recommend Favorite

Chemical-Mechanical polishing of parylene- n films: evaluation by X-Ray photoelectron spectroscopy and atomic force microscopy

By Yang G.   Zhao Y.   Neirynck Jan   Murarka Shyam   Gutmann Ronald  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 935-940

Springer Publishing Company

Access to resources Recommend Favorite

Investigation of charge loss characteristics of HfO2 annealed in N2 or O2 ambient

By Yuqiong Chu   Zongliang Huo   Yulong Han   Guoxing Chen   Dong Zhang   Xinkai Li   Ming Liu  

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 83004-83008

IOP Publishing

Access to resources Recommend Favorite

Charge trapping in SiO2/HfO2/TiN gate stack

By Lime F.   Ghibaudo G.   Guillaumot B.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1445-1448

Elsevier

Access to resources Recommend Favorite